Reference Only

IXTH68P20T

MOSFETs TrenchP Power MOSFET

Manufacturer:

Mfr Part:
IXTH68P20T

TTI Part:
IXTH68P20T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current68 A
Rds On - Drain-Source Resistance55 mOhms
Vgs - Gate-Source Voltage15 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge380 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation568 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Pin Count3
Product TypeMOSFETs
SeriesIXTH68P20
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 25 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$12.58$3,774.00
Need more?
Sign in to add projects and notes