Reference Only

IXTH40N30

MOSFETs 40 Amps 300V 0.085 Rds

Manufacturer:

Mfr Part:
IXTH40N30

TTI Part:
IXTH40N30

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance85 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time40 ns
Forward Transconductance - Min25 S
Product TypeMOSFETs
Rise Time40 ns
SeriesIXTH40N30
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Tube

Pricing not available for this package type
Need pricing?

My Notes

Sign into see notes.