Reference Only

IXTH3N100P

MOSFETs 3 Amps 1000V

Manufacturer:

Mfr Part:
IXTH3N100P

TTI Part:
IXTH3N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance4.8 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time29 ns
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTH3N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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