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IXTH30N60L2

MOSFETs 30 Amps 600V

Manufacturer:

Mfr Part:
IXTH30N60L2

TTI Part:
IXTH30N60L2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance240 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge335 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation540 W
Channel ModeEnhancement
TradenameLinear L2
PackagingTube
ConfigurationSingle
Fall Time43 ns
Forward Transconductance - Min10 S
Product TypeMOSFETs
Rise Time65 ns
SeriesIXTH30N60
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time123 ns
Typical Turn-On Delay Time43 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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EDA / CAD Models

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