Reference Only

IXTH02N250

MOSFETs High Voltage Power MOSFET; 2500V, 0.2A

Manufacturer:

Mfr Part:
IXTH02N250

TTI Part:
IXTH02N250

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage2.5 kV
Id - Continuous Drain Current200 mA
Rds On - Drain-Source Resistance450 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge7.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation83 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time33 ns
Forward Transconductance - Min88 mS
Product TypeMOSFETs
Rise Time19 ns
SeriesIXTH02N250
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

150In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$12.51$375.30
$12.38$742.80
$12.25$1,470.00
$12.12$3,636.00
$11.99$5,395.50
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