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IXTA80N12T2

MOSFETs TrenchT2 MOSFETs Power MOSFETs

Manufacturer:

Mfr Part:
IXTA80N12T2

TTI Part:
IXTA80N12T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage120 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance17 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge80 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation325 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time28 ns
Forward Transconductance - Min36 S
Product TypeMOSFETs
Rise Time14 ns
SeriesIXTA80N12
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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