Reference Only

IXTA62N15P

MOSFETs 62 Amps 150V 0.04 Rds

Manufacturer:

Mfr Part:
IXTA62N15P

TTI Part:
IXTA62N15P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current62 A
Rds On - Drain-Source Resistance33 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge70 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation350 W
Channel ModeEnhancement
TradenamePolarHT
PackagingTube
ConfigurationSingle
Fall Time35 ns
Forward Transconductance - Min14 S
Product TypeMOSFETs
Rise Time38 ns
SeriesIXTA62N15
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time76 ns
Typical Turn-On Delay Time27 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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