Reference Only

IXTA4N80P

MOSFETs 3.5 Amps 800V 3 Rds

Manufacturer:

Mfr Part:
IXTA4N80P

TTI Part:
IXTA4N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current3.5 A
Rds On - Drain-Source Resistance3 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge14.2 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation100 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time29 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesIXTA4N80
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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