Reference Only

IXTA3N100D2HV

MOSFETs TO263 1KV 3A N-CH DEPL

Manufacturer:

Mfr Part:
IXTA3N100D2HV

TTI Part:
IXTA3N100D2HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263HV-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance6 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge37.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time40 ns
Product TypeMOSFETs
Rise Time67 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time27 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 36 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
$3.90$1,170.00
Need more?

My Notes

Sign into see notes.