Reference Only

IXTA200N055T2

MOSFETs 200 Amps 55V 0.0042 Rds

Manufacturer:

Mfr Part:
IXTA200N055T2

TTI Part:
IXTA200N055T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage55 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance3.3 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge109 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation360 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time27 ns
Forward Transconductance - Min50 S
Product TypeMOSFETs
Rise Time22 ns
SeriesIXTA200N055
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time49 ns
Typical Turn-On Delay Time26 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 25 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
$2.50$750.00
Need more?

My Notes

Sign into see notes.