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IXTA1N100P

MOSFETs 1 Amps 1000V 14 Rds

Manufacturer:

Mfr Part:
IXTA1N100P

TTI Part:
IXTA1N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current1.2 A
Rds On - Drain-Source Resistance13 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge15.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation50 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time24 ns
Product TypeMOSFETs
Rise Time26 ns
SeriesIXTA1N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time55 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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