Reference Only

IXTA12N50P

MOSFETs 12.0 Amps 500 V 0.5 Ohm Rds

Manufacturer:

Mfr Part:
IXTA12N50P

TTI Part:
IXTA12N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance500 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation200 W
Channel ModeEnhancement
TradenamePolar
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min7.5 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTA12N50P
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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