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IXTA100N04T2

MOSFETs 100 Amps 40V

Manufacturer:

Mfr Part:
IXTA100N04T2

TTI Part:
IXTA100N04T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance7 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge25.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time6.4 ns
Forward Transconductance - Min27 S
Product TypeMOSFETs
Rise Time5.2 ns
SeriesIXTA100N04
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15.8 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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