Reference Only

IXTA08N100P

MOSFETs 0.8 Amps 1000V 20 Rds

Manufacturer:

Mfr Part:
IXTA08N100P

TTI Part:
IXTA08N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current800 mA
Rds On - Drain-Source Resistance20 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation42 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time34 ns
Product TypeMOSFETs
Rise Time37 ns
SeriesIXTA08N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time19 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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