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IXSH20N120L2KHV

SiC MOSFETs TO247 1200V N CH 20A

Manufacturer:

Mfr Part:
IXSH20N120L2KHV

TTI Part:
IXSH20N120L2KHV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance208 mOhms
Vgs - Gate-Source Voltage- 5 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge29 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation136 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10.4 ns
PackagingReel
Product TypeSiC MOSFETS
ProductSiC MOSFETS
Rise Time10.8 ns
SeriesIXSxNxL2Kx
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time8.4 ns
Typical Turn-On Delay Time2.8 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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