Reference Only

IXSA80N120L2-7TR

SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L

Manufacturer:

Mfr Part:
IXSA80N120L2-7TR

TTI Part:
IXSA80N120L2-7TR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7L
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current79 A
Rds On - Drain-Source Resistance39 mOhms
Vgs - Gate-Source Voltage- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge135 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation395 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time13.6 ns
PackagingReel
Product TypeSiC MOSFETS
ProductMOSFETs
Rise Time24.6 ns
SeriesIXSA80N120L2-7
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
TypeSiC MOSFET
Typical Turn-Off Delay Time28.6 ns
Typical Turn-On Delay Time15.4 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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$7.25$3,625.00
$6.81$5,448.00
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