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IXGT32N120A3

IGBTs GenX3 1200V IGBTs

Manufacturer:

Mfr Part:
IXGT32N120A3

TTI Part:
IXGT32N120A3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.35 V
Maximum Gate Emitter Voltage20 V
Continuous Collector Current at 25 C75 A
Pd - Power Dissipation300 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGT32N120
PackagingTube
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameGenX3

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 65 Weeks
Please adjust quantity to minimum and multiple values.
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Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$10.01$300.30
Need more?
NCNR - Cannot be cancelled or returned.

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