Reference Only

IXGH50N90B2D1

IGBTs 50 Amps 900V 2.7 Rds

Manufacturer:

Mfr Part:
IXGH50N90B2D1

TTI Part:
IXGH50N90B2D1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247AD-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max900 V
Collector-Emitter Saturation Voltage2.7 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C75 A
Pd - Power Dissipation400 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXGH50N90
PackagingTube
Continuous Collector Current Ic Max200 A
Gate-Emitter Leakage Current100 nA
Height21.46 mm
Length16.26 mm
Product TypeIGBTs
SubcategoryTransistors
TradenameHiPerFAST
Width5.3 mm

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 54 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$10.94$3,282.00
Need more?
NCNR - Cannot be cancelled or returned.

Associated Parts

MGJ2D052005SC Murata
DC/DC Converters - Through Hole 2W 5-20VIN 5VOUT DC/DC
Sign in to add projects and notes