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IXFX170N20P

MOSFETs Polar HiperFET Power MOSFET

Manufacturer:

Mfr Part:
IXFX170N20P

TTI Part:
IXFX170N20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current170 A
Rds On - Drain-Source Resistance14 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge185 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.25 kW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
Fall Time14 ns
Forward Transconductance - Min45 S
Product TypeMOSFETs
Rise Time25 ns
SeriesIXFX170N20
SubcategoryTransistors
Typical Turn-Off Delay Time50 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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