Reference Only

IXFT60N50P3

MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET

Manufacturer:

Mfr Part:
IXFT60N50P3

TTI Part:
IXFT60N50P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge96 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.04 mW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min60 S, 35 S
Product TypeMOSFETs
Rise Time16 ns
SeriesIXFT60N50
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 39 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$8.03$2,409.00
Need more?

Associated Parts

MGJ2D052005SC Murata
DC/DC Converters - Through Hole 2W 5-20VIN 5VOUT DC/DC

My Notes

Sign into see notes.