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IXFT50N30Q3

MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/50A

Manufacturer:

Mfr Part:
IXFT50N30Q3

TTI Part:
IXFT50N30Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance80 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Qg - Gate Charge65 nC
Pd - Power Dissipation690 W
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
Rise Time250 ns
SeriesIXFT50N30
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 46 Weeks
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