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IXFT18N100Q3

MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A

Manufacturer:

Mfr Part:
IXFT18N100Q3

TTI Part:
IXFT18N100Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current18 A
Rds On - Drain-Source Resistance660 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Qg - Gate Charge90 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation830 W
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time13 ns
Forward Transconductance - Min16 S
Product TypeMOSFETs
Rise Time32 ns
SeriesIXFT18N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time37 nS

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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