Reference Only

IXFR20N80P

MOSFETs 10 Amps 800V 0.5 Rds

Manufacturer:

Mfr Part:
IXFR20N80P

TTI Part:
IXFR20N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance570 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation166 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time25 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesIXFR20N80
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 48 Weeks
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