Reference Only

IXFQ60N50P3

MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET

Manufacturer:

Mfr Part:
IXFQ60N50P3

TTI Part:
IXFQ60N50P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge96 nC
Pd - Power Dissipation1.04 mW
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time8 ns
Forward Transconductance - Min60 S, 35 S
Product TypeMOSFETs
Rise Time16 ns
SeriesIXFQ60N50
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

300In Stock

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Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$5.96$178.80
$5.90$708.00
$5.29$2,697.90
$5.24$5,344.80
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