Reference Only

IXFQ20N50P3

MOSFETs Polar3 HiPerFET Power MOSFET

Manufacturer:

Mfr Part:
IXFQ20N50P3

TTI Part:
IXFQ20N50P3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current20 A
Rds On - Drain-Source Resistance300 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge36 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation380 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time9 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time5 ns
SeriesIXFQ20N50
SubcategoryTransistors
Typical Turn-Off Delay Time43 ns
Typical Turn-On Delay Time10 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

300In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$3.20$96.00
$3.16$189.60
$3.12$374.40
$3.08$1,570.80
$3.04$3,100.80
$3.00$6,030.00
Need more?

Associated Parts

MGJ2D052005SC Murata
DC/DC Converters - Through Hole 2W 5-20VIN 5VOUT DC/DC

My Notes

Sign into see notes.