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IXFP6N120P

MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A

Manufacturer:

Mfr Part:
IXFP6N120P

TTI Part:
IXFP6N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance2.75 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge92 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
Fall Time14 ns
Forward Transconductance - Min3 S
Product TypeMOSFETs
Rise Time11 ns
SeriesIXFP6N120
SubcategoryTransistors
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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