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IXFN82N60Q3

MOSFET Modules Q3Class HiPerFET Pwr MOSFET 600V/66A

Manufacturer:

Mfr Part:
IXFN82N60Q3

TTI Part:
IXFN82N60Q3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage600 V
Id - Continuous Drain Current66 A
Rds On - Drain-Source Resistance75 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Pd - Power Dissipation960 W
SeriesIXFN82N60
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
Rise Time300 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
$49.94$14,982.00
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