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IXFN80N50P

MOSFET Modules 500V 66A

Manufacturer:

Mfr Part:
IXFN80N50P

TTI Part:
IXFN80N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current66 A
Rds On - Drain-Source Resistance65 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation700 W
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Fall Time18 ns
Height9.6 mm
Length38.2 mm
Product TypeMOSFET Modules
Rise Time27 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time25 ns
Width25.07 mm

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
$25.92$7,776.00
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