Reference Only
IXFN520N075T2
MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET
Datasheet
IXFN520N075T2 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFET Modules | |
| Technology | Si | |
| Mounting Style | Screw Mount | |
| Package / Case | SOT-227-4 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 75 V | |
| Id - Continuous Drain Current | 480 A | |
| Rds On - Drain-Source Resistance | 1.9 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 940 W | |
| Series | IXFN520N075 | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 35 ns | |
| Product Type | MOSFET Modules | |
| Rise Time | 36 ns | |
| Subcategory | Discrete and Power Modules | |
| Tradename | HiPerFET | |
| Type | Trench | |
| Typical Turn-Off Delay Time | 80 ns | |
| Typical Turn-On Delay Time | 48 ns | |
| Vr - Reverse Voltage | 37.5 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
510In Stock
800 expected on from 10-Jun-27
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 10 / Multiples: 10)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $29.64 | $296.40 | |
| $29.34 | $880.20 | |
| $27.29 | $1,364.50 | |
| $27.01 | $2,701.00 | |
| $26.73 | $5,346.00 |
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