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IXFN360N10T

MOSFET Modules 360 Amps 100V

Manufacturer:

Mfr Part:
IXFN360N10T

TTI Part:
IXFN360N10T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current360 A
Rds On - Drain-Source Resistance2.6 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation830 W
SeriesIXFN360N10
PackagingTube
ConfigurationSingle
Fall Time160 ns
Product TypeMOSFET Modules
Rise Time100 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePower MOSFET
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time47 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

40In Stock

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(Minimum: 10 / Multiples: 10)
Quantity Unit PriceExt. Price
$20.29$202.90
$17.76$1,776.00
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