Reference Only

IXFN32N80P

MOSFET Modules 29 Amps 800V 0.27 Rds

Manufacturer:

Mfr Part:
IXFN32N80P

TTI Part:
IXFN32N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current29 A
Rds On - Drain-Source Resistance270 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation625 W
SeriesIXFN32N80
PackagingTube
ConfigurationSingle
Fall Time26 ns
Height9.6 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time29 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET
Typical Turn-Off Delay Time85 ns
Typical Turn-On Delay Time30 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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$22.75$6,825.00
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