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IXFN32N120P

MOSFET Modules 32 Amps 1200V

Manufacturer:

Mfr Part:
IXFN32N120P

TTI Part:
IXFN32N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance310 mOhms
Vgs - Gate-Source Voltage- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1 kW
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Fall Time58 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time62 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypePolar HiPerFET Power MOSFET
Typical Turn-Off Delay Time88 ns
Typical Turn-On Delay Time70 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 66 Weeks
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$64.04$19,212.00
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