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IXFN30N120P

Discrete Semiconductor Modules 30 Amps 1200V 0.35 Rds

Manufacturer:

Mfr Part:
IXFN30N120P

TTI Part:
IXFN30N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryDiscrete Semiconductor Modules
TechnologySi
Vgs - Gate-Source Voltage- 30 V, + 30 V
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXFN30N120
PackagingTube
ConfigurationSingle
Fall Time56 ns
Id - Continuous Drain Current30 A
Pd - Power Dissipation890 W
Product TypeDiscrete Semiconductor Modules
Rds On - Drain-Source Resistance350 mOhms
Rise Time60 ns
SubcategoryDiscrete Semiconductor Modules
TradenameHiPerFET
Transistor PolarityN-Channel
Typical Turn-Off Delay Time95 ns
Typical Turn-On Delay Time57 ns
Vds - Drain-Source Breakdown Voltage1.2 kV

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 34 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
$58.44$17,532.00
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