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IXFN26N100P

Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds

Manufacturer:

Mfr Part:
IXFN26N100P

TTI Part:
IXFN26N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryDiscrete Semiconductor Modules
TechnologySi
Vgs - Gate-Source Voltage- 30 V, + 30 V
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesIXFN26N100
PackagingTube
ConfigurationSingle
Fall Time50 ns
Id - Continuous Drain Current23 A
Pd - Power Dissipation595 W
Product TypeDiscrete Semiconductor Modules
Rds On - Drain-Source Resistance390 mOhms
Rise Time45 ns
SubcategoryDiscrete Semiconductor Modules
TradenameHiPerFET
Transistor PolarityN-Channel
Typical Turn-Off Delay Time72 ns
Typical Turn-On Delay Time45 ns
Vds - Drain-Source Breakdown Voltage1 kV

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 29 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
$54.17$16,251.00
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