Reference Only

IXFN210N20P

MOSFET Modules 188 Amps 200V 0.0105 Rds

Manufacturer:

Mfr Part:
IXFN210N20P

TTI Part:
IXFN210N20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current188 A
Rds On - Drain-Source Resistance10.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.07 kW
SeriesHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFET Modules
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 32 Weeks
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(Minimum: 300 / Multiples: 10)
Quantity Unit PriceExt. Price
$37.24$11,172.00
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