Reference Only

IXFN200N10P

MOSFET Modules 200 Amps 100V 0.0075 Rds

Manufacturer:

Mfr Part:
IXFN200N10P

TTI Part:
IXFN200N10P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance7.5 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation680 W
SeriesIXFN200N10
PackagingTube
ConfigurationSingle
Fall Time90 ns
Height9.6 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time35 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeHiperFET
Typical Turn-Off Delay Time150 ns
Typical Turn-On Delay Time30 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 28 Weeks
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$20.74$6,222.00
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