Reference Only
IXFN180N10
MOSFET Modules 180 Amps 100V 0.008 Rds
Datasheet
IXFN180N10 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFET Modules | |
| Type | HiperFET | |
| Technology | Si | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Mounting Style | Screw Mount | |
| Package / Case | SOT-227-4 | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Series | IXFN180N10 | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 65 ns | |
| Height | 9.6 mm | |
| Id - Continuous Drain Current | 180 A | |
| Length | 38.23 mm | |
| Number of Channels | 1 Channel | |
| Pd - Power Dissipation | 600 W | |
| Product Type | MOSFET Modules | |
| Rds On - Drain-Source Resistance | 8 mOhms | |
| Rise Time | 90 ns | |
| Subcategory | Discrete and Power Modules | |
| Tradename | HiPerFET | |
| Transistor Polarity | N-Channel | |
| Typical Turn-Off Delay Time | 140 ns | |
| Typical Turn-On Delay Time | 50 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Width | 25.42 mm |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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