Reference Only

IXFN140N25T

MOSFET Modules GigaMOS HiperFET Power MOSFET

Manufacturer:

Mfr Part:
IXFN140N25T

TTI Part:
IXFN140N25T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage250 V
Id - Continuous Drain Current120 A
Rds On - Drain-Source Resistance17 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation690 W
SeriesIXFN140N25
PackagingTube
ConfigurationSingle
Fall Time22 ns
Height12.22 mm
Length38.23 mm
Product TypeMOSFET Modules
Rise Time29 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeGigaMOS HiperFET Power MOSFET
Typical Turn-Off Delay Time92 ns
Typical Turn-On Delay Time33 ns
Width25.42 mm

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 25 Weeks
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$29.72$8,916.00
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