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IXFK360N15T2

MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET

Manufacturer:

Mfr Part:
IXFK360N15T2

TTI Part:
IXFK360N15T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage150 V
Id - Continuous Drain Current360 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge715 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.67 mW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time265 ns
Forward Transconductance - Min140 S
Product TypeMOSFETs
Rise Time170 ns
SeriesIXFK360N15
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time115 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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