Reference Only

IXFK32N100P

MOSFETs 32 Amps 1000V 0.32 Rds

Manufacturer:

Mfr Part:
IXFK32N100P

TTI Part:
IXFK32N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance320 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6.5 V
Qg - Gate Charge225 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation960 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time43 ns
Forward Transconductance - Min13 S
Product TypeMOSFETs
Rise Time55 ns
SeriesIXFK32N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time76 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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EDA / CAD Models

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Lead Time: 29 Weeks
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