Reference Only

IXFH80N65X2

MOSFETs MOSFET 650V/80A Ultra Junction X2

Manufacturer:

Mfr Part:
IXFH80N65X2

TTI Part:
IXFH80N65X2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance40 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.7 V
Qg - Gate Charge143 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation890 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time11 ns
Forward Transconductance - Min36 S
Product TypeMOSFETs
Rise Time42 ns
Series650V Ultra Junction X2
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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Lead Time: 36 Weeks
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