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IXFH6N100F

MOSFETs HiPerRF Power Mosfet 1000V 6A

Manufacturer:

Mfr Part:
IXFH6N100F

TTI Part:
IXFH6N100F

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current6 A
Rds On - Drain-Source Resistance1.9 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time8.3 ns
Product TypeMOSFETs
Rise Time8.6 ns
SeriesHiPerFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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