Reference Only

IXFH110N25T

MOSFETs 110 Amps 0V

Manufacturer:

Mfr Part:
IXFH110N25T

TTI Part:
IXFH110N25T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage250 V
Id - Continuous Drain Current110 A
Rds On - Drain-Source Resistance24 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge157 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation694 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIXFH110N25T
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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EDA / CAD Models

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Lead Time: 25 Weeks
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