Reference Only

IXFH10N80P

MOSFETs 10 Amps 800V 1.1 Rds

Manufacturer:

Mfr Part:
IXFH10N80P

TTI Part:
IXFH10N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current10 A
Rds On - Drain-Source Resistance1.1 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge40 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min7 S
Product TypeMOSFETs
Rise Time22 ns
SeriesIXFH10N80P
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time62 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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EDA / CAD Models

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