Reference Only
IXFH10N80P
MOSFETs 10 Amps 800V 1.1 Rds
Datasheet
IXFH10N80P DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Id - Continuous Drain Current | 10 A | |
| Rds On - Drain-Source Resistance | 1.1 Ohms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5.5 V | |
| Qg - Gate Charge | 40 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 300 W | |
| Channel Mode | Enhancement | |
| Tradename | HiPerFET | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 22 ns | |
| Forward Transconductance - Min | 7 S | |
| Product Type | MOSFETs | |
| Rise Time | 22 ns | |
| Series | IXFH10N80P | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 62 ns | |
| Typical Turn-On Delay Time | 21 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
240In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 30 / Multiples: 30)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $3.55 | $106.50 | |
| $3.51 | $210.60 | |
| $3.46 | $415.20 | |
| $3.42 | $923.40 | |
| $3.19 | $1,626.90 | |
| $3.14 | $3,202.80 | |
| $3.10 | $6,231.00 |
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