Reference Only

IXFB60N80P

MOSFETs 60 Amps 800V 0.14 Rds

Manufacturer:

Mfr Part:
IXFB60N80P

TTI Part:
IXFB60N80P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
Channel ModeEnhancement
ConfigurationSingle
Fall Time26 ns
Forward Transconductance - Min35 S
Id - Continuous Drain Current60 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Number of Channels1 Channel
PackagingTube
Package / CasePLUS-264-3
Pd - Power Dissipation1.25 kW
Product TypeMOSFETs
Qg - Gate Charge250 nC
Rds On - Drain-Source Resistance140 mOhms
Rise Time29 ns
SeriesIXFB60N80
SubcategoryTransistors
TechnologySi
TradenameHiPerFET
Transistor PolarityN-Channel
Transistor Type1 N-Channel
Typical Turn-Off Delay Time110 ns
Typical Turn-On Delay Time36 ns
Vds - Drain-Source Breakdown Voltage800 V
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5 V

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

300In Stock

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$20.84$521.00
$20.62$1,031.00
$20.39$2,039.00
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