Reference Only

IXFB210N20P

MOSFETs 210 Amps 200V 0.0105 Rds

Manufacturer:

Mfr Part:
IXFB210N20P

TTI Part:
IXFB210N20P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CasePLUS-264-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current210 A
Rds On - Drain-Source Resistance10.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.5 kW
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIXFB210N20
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541500000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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Lead Time: 46 Weeks
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