Reference Only
IXFA6N120P
MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A
Datasheet
IXFA6N120P DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | D2PAK-3 (TO-263-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 6 A | |
| Rds On - Drain-Source Resistance | 2.75 Ohms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Qg - Gate Charge | 92 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 250 W | |
| Channel Mode | Enhancement | |
| Tradename | HiPerFET | |
| Packaging | Tube | |
| Fall Time | 14 ns | |
| Forward Transconductance - Min | 3 S | |
| Product Type | MOSFETs | |
| Rise Time | 11 ns | |
| Series | IXFA6N120 | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 60 ns | |
| Typical Turn-On Delay Time | 24 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Dechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo[12.2.1.16,9.02,1 |
150In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $6.65 | $332.50 | |
| $6.30 | $630.00 | |
| $6.24 | $936.00 | |
| $6.18 | $1,545.00 | |
| $6.12 | $3,060.00 | |
| $6.06 | $6,060.00 |
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