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IXFA5N100P

MOSFETs Polar Power MOSFET HiPerFET

Manufacturer:

Mfr Part:
IXFA5N100P

TTI Part:
IXFA5N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current5 A
Rds On - Drain-Source Resistance2.8 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage6 V
Qg - Gate Charge33.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation250 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
Fall Time37 ns
Forward Transconductance - Min2.4 S
Product TypeMOSFETs
Rise Time13 ns
SeriesIXFA5N100
SubcategoryTransistors
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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