Reference Only

IXFA4N100Q

MOSFETs 4 Amps 1000V 2.8 Rds

Manufacturer:

Mfr Part:
IXFA4N100Q

TTI Part:
IXFA4N100Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current4 A
Rds On - Drain-Source Resistance3 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation150 W
Channel ModeEnhancement
TradenameHyperFET
PackagingTube
ConfigurationSingle
Fall Time18 ns
Product TypeMOSFETs
Rise Time15 ns
SeriesIXFA4N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

300In Stock

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Quantity Unit PriceExt. Price
$5.25$262.50
$5.20$520.00
$5.15$1,030.00
$4.67$2,335.00
$4.60$4,600.00
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