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IXDN75N120

IGBTs 75 Amps 1200V

Manufacturer:

Mfr Part:
IXDN75N120

TTI Part:
IXDN75N120

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSOT-227B-4
Mounting StyleScrew Mount
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.2 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C150 A
Pd - Power Dissipation660 W
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
SeriesIXDN75N120
PackagingTube
Continuous Collector Current Ic Max150 A
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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Lead Time: 54 Weeks
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Quantity Unit PriceExt. Price
$37.72$377.20
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